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DC COMPONENTS CO., LTD.
R
2N3904
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier applications.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 60 40 6 200 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICEX
(1)
Min 60 40 6 0.65 40 70 100 60 30 300 2%
Typ -
Max 50 0.2 0.3 0.85 0.95 300 4
Unit V V V nA V V V V MHz pF
Test Conditions IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCE=30V, VBE=3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=50mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=20V, f=100MHz VCB=5V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
(1)
VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2
DC Current Gain
(1)
hFE3 hFE4 hFE5
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
fT Cob 380s, Duty Cycle

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